Invention Grant
- Patent Title: Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions
- Patent Title (中): 使用离子注入沟槽和包括掩埋结的碳化硅器件在碳化硅中形成掩埋结器件的方法
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Application No.: US14297074Application Date: 2014-06-05
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Publication No.: US09484413B2Publication Date: 2016-11-01
- Inventor: Edward Robert Van Brunt , Alexander V. Suvorov , Vipindas Pala , Lin Cheng
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel & Sibley, P.A.
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L21/265 ; H01L21/04 ; H01L29/66 ; H01L29/861 ; H01L29/872 ; H01L29/78 ; H01L29/06 ; H01L29/08 ; H01L29/10
Abstract:
A semiconductor device structure according to some embodiments includes a silicon carbide substrate having a first conductivity type, a silicon carbide drift layer having the first conductivity type on the silicon carbide substrate and having an upper surface opposite the silicon carbide substrate, and a buried junction structure in the silicon carbide drift layer. The buried junction structure has a second conductivity type opposite the first conductivity type and has a junction depth that is greater than about one micron.
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