Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14443176Application Date: 2013-12-19
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Publication No.: US09484414B2Publication Date: 2016-11-01
- Inventor: Hirofumi Yamamoto , Toru Hiyoshi , Shinji Matsukawa
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Sartori; F. Brock Riggs
- Priority: JP2013-022221 20130207
- International Application: PCT/JP2013/084054 WO 20131219
- International Announcement: WO2014/122863 WO 20140814
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/16 ; H01L29/417 ; H01L29/47 ; H01L29/872 ; H01L29/66 ; H01L29/08 ; H01L21/04 ; H01L29/78 ; H01L29/04 ; H01L21/28 ; H01L29/12 ; H01L29/45 ; H01L29/861 ; H01L29/10
Abstract:
A MOSFET includes a silicon carbide substrate including a main surface having an off angle with respect to a {0001} plane and a source electrode formed in contact with the main surface. A base surface is exposed at at least a part of a contact interface of the silicon carbide substrate with the source electrode. With such a construction, the MOSFET achieves suppressed variation in threshold voltage.
Public/Granted literature
- US20150372092A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-12-24
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