An n-type low lifetime adjustment region is provided in a portion inside an n− type drift region deeper than the bottom surface of a termination p-type base region or p-type guard ring from a substrate front surface, separated from the termination p-type base region and the p-type guard ring. The carrier lifetime of the n-type low lifetime adjustment region is shorter than the carrier lifetime of the n− type drift region. Because of this, it is possible to provide a reverse blocking IGBT such that it is possible to suppress both a high temperature reverse leakage current and an increase in turn-off loss, while suppressing deterioration in the trade-off relationship between the turn-off loss and the on-state voltage.