MOSFET active area and edge termination area charge balance

Invention Grant

US09484451B2 MOSFET active area and edge termination area charge balance 有权

Title translation: MOSFET有效面积和边缘终端区电荷平衡

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Patent Title: MOSFET active area and edge termination area charge balance
Patent Title (中): MOSFET有效面积和边缘终端区电荷平衡
Application No.: US12203846

Application Date: 2008-09-03
Publication No.: US09484451B2

Publication Date: 2016-11-01
Inventor: Qufei Chen , Kyle Terrill , Sharon Shi
Applicant: Qufei Chen , Kyle Terrill , Sharon Shi
Applicant Address: US CA Santa Clara
Assignee: VISHAY-SILICONIX
Current Assignee: VISHAY-SILICONIX
Current Assignee Address: US CA Santa Clara
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L29/78 ; H01L29/66 ; H01L29/08 ; H01L29/06 ; H01L29/10 ; H01L29/40

MOSFET active area and edge termination area charge balance

Abstract:

A method for fabricating a MOSFET having an active area and an edge termination area is disclosed. The method includes forming a first plurality of implants at the bottom of trenches located in the active area and in the edge termination area. A second plurality of implants is formed at the bottom of the trenches located in the active area. The second plurality of implants formed at the bottom of the trenches located in the active area causes the implants formed at the bottom of the trenches located in the active area to reach a predetermined concentration. In so doing, the breakdown voltage of both the active and edge termination areas can be made similar and thereby optimized while maintaining advantageous RDson.

Abstract(Chinese):

公开了一种用于制造具有有源区和边缘终止区的MOSFET的方法。该方法包括在位于有源区域和边缘终止区域中的沟槽的底部形成第一多个植入物。在位于有源区域中的沟槽的底部形成第二多个植入物。形成在位于有源区域的沟槽底部的第二多个植入物导致形成在位于有源区域中的沟槽底部的植入物达到预定浓度。这样做，可以使有源和边沿端接区域的击穿电压相似，从而在保持有利的RDson的同时进行优化。

Public/Granted literature

US20090090967A1 MOSFET ACTIVE AREA AND EDGE TERMINATION AREA CHARGE BALANCE Public/Granted day:2009-04-09

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS