Invention Grant
US09484490B2 Epitaxy substrate, method for producing an epitaxy substrate and optoelectronic semiconductor chip comprising an epitaxy substrate
有权
外延衬底，用于制造外延衬底的方法和包括外延衬底的光电子半导体芯片
- Patent Title: Epitaxy substrate, method for producing an epitaxy substrate and optoelectronic semiconductor chip comprising an epitaxy substrate
- Patent Title (中): 外延衬底，用于制造外延衬底的方法和包括外延衬底的光电子半导体芯片
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Application No.: US14397175Application Date: 2013-04-24
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Publication No.: US09484490B2Publication Date: 2016-11-01
- Inventor: Joachim Hertkorn , Alexander Frey , Christian Schmid
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
- Current Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
- Current Assignee Address: DE Regensburg
- Agency: McDermott Will & Emery LLP
- Priority: DE102012103686 20120426
- International Application: PCT/EP2013/058477 WO 20130424
- International Announcement: WO2013/160343 WO 20131031
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/02 ; H01L31/0304 ; H01L31/18 ; H01L33/32
Abstract:
An epitaxy substrate (11, 12, 13) for a nitride compound semiconductor material is specified, which has a nucleation layer (2) directly on a substrate (1) wherein the nucleation layer (2) has at least one first layer (21) composed of AlON with a column structure. A method for producing an epitaxy substrate and an optoelectronic semiconductor chip comprising an epitaxy substrate are furthermore specified.
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