Invention Grant
- Patent Title: Capacitance type sensor and method of manufacturing the same
- Patent Title (中): 电容式传感器及其制造方法
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Application No.: US14373547Application Date: 2012-11-14
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Publication No.: US09493338B2Publication Date: 2016-11-15
- Inventor: Yusuke Nakagawa , Takashi Kasai , Yoshitaka Tatara
- Applicant: OMRON Corporation
- Applicant Address: JP Kyoto
- Assignee: OMRON Corporation
- Current Assignee: OMRON Corporation
- Current Assignee Address: JP Kyoto
- Agency: Osha Liang LLP
- Priority: JP2012-031055 20120215
- International Application: PCT/JP2012/079568 WO 20121114
- International Announcement: WO2013/121640 WO 20130822
- Main IPC: G01H11/06
- IPC: G01H11/06 ; B81B3/00 ; H04R19/00 ; H04R31/00 ; B81C1/00 ; G01L9/12 ; H04R19/04

Abstract:
A capacitance type sensor has a semiconductor substrate having a vertically opened penetration hole, a movable electrode film arranged above the penetration hole such that a periphery portion opposes to a top surface of the semiconductor substrate with a gap provided, and a fixed electrode film arranged above the movable electrode film with a gap with respect to the movable electrode film. A concave portion having at least a part thereof formed by an inclined surface is provided in the top surface of the semiconductor substrate in a region of the top surface of the semiconductor substrate which overlaps the periphery portion of the movable electrode film.
Public/Granted literature
- US20140367811A1 CAPACITANCE TYPE SENSOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-12-18
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