Invention Grant
- Patent Title: Nucleation of III-N on REO templates
- Patent Title (中): III-N在REO模板上的成核
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Application No.: US13845426Application Date: 2013-03-18
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Publication No.: US09496132B2Publication Date: 2016-11-15
- Inventor: Erdem Arkun , Andrew Clark , Rytis Dargis , Radek Roucka , Michael Lebby
- Applicant: TRANSLUCENT, INC.
- Applicant Address: US CA Palo Alto
- Assignee: Translucent, Inc.
- Current Assignee: Translucent, Inc.
- Current Assignee Address: US CA Palo Alto
- Agency: Parsons & Goltry
- Agent Robert A. Parsons; Michael W. Goltry
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/20
Abstract:
A method of fabricating a layer of single crystal III-N material on a silicon substrate includes epitaxially growing a REO template on a silicon substrate. The template includes a REO layer adjacent the substrate with a crystal lattice spacing substantially matching the crystal lattice spacing of the substrate and selected to protect the substrate from nitridation. Either a rare earth oxynitride or a rare earth nitride is formed adjacent the upper surface of the template and a layer of single crystal III-N material is epitaxially grown thereon.
Public/Granted literature
- US20130248853A1 NUCLEATION OF III-N ON REO TEMPLATES Public/Granted day:2013-09-26
Information query
IPC分类:
