Invention Grant
- Patent Title: Semiconductor chip with structured sidewalls
- Patent Title (中): 具有结构化侧壁的半导体芯片
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Application No.: US14858633Application Date: 2015-09-18
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Publication No.: US09496193B1Publication Date: 2016-11-15
- Inventor: Michael Roesner , Gudrun Stranzl , Martin Zgaga , Martin Sporn , Tobias Schmidt
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L23/04
- IPC: H01L23/04 ; H01L21/48 ; H01L21/78 ; H01L21/56 ; H01L23/31 ; H01L23/12 ; H01L23/00
Abstract:
A semiconductor chip includes a body having a frontside, a backside opposite the frontside, and sidewalls extending between the backside and frontside, at least a portion of each sidewall having a defined surface structure with hydrophobic characteristics to inhibit travel of a bonding material along the sidewalls during attachment of the semiconductor chip to a carrier with the bonding material.
Information query
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