Invention Grant
- Patent Title: Semiconductor-on-insulator with back side support layer
- Patent Title (中): 具有背面支撑层的绝缘体绝缘体
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Application No.: US14707998Application Date: 2015-05-08
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Publication No.: US09496227B2Publication Date: 2016-11-15
- Inventor: Stuart B. Molin , Paul A. Nygaard , Michael A. Stuber
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L23/00 ; H01L27/12 ; H01L21/762 ; H01L21/84 ; H01L23/36 ; H01L23/367 ; H01L29/786 ; H01L23/66
Abstract:
In one embodiment, an integrated circuit with a signal-processing region is disclosed. The integrated circuit comprises a silicon-on-insulator die singulated from a silicon-on-insulator wafer. The silicon on insulator die comprises an active layer, an insulator layer, a substrate, and a strengthening layer. The substrate consists of an excavated substrate region, and a support region, the support region is in contact with the insulator layer. The excavated region covers a majority of the signal-processing region of the integrated circuit.
Public/Granted literature
- US20150249056A1 SEMICONDUCTOR-ON-INSULATOR WITH BACK SIDE SUPPORT LAYER Public/Granted day:2015-09-03
Information query
IPC分类:
