Invention Grant
- Patent Title: Semiconductor device and its manufacturing method
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US14836688Application Date: 2015-08-26
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Publication No.: US09496232B2Publication Date: 2016-11-15
- Inventor: Akira Yajima
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2014-173454 20140828
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/00
Abstract:
The present invention makes it possible to: reduce the manufacturing cost of a semiconductor device having a redistribution layer; and further improve the reliability of a semiconductor device having a redistribution layer.A feature point of First Embodiment is that an opening and a redistribution layer gutter are formed integrally in a polyimide resin film of a single layer as shown in FIG. 5. It is thereby possible to: form a redistribution layer in the polyimide resin film of a single layer; and hence inhibit a wiring material (silver) including the redistribution layer from migrating.
Public/Granted literature
- US20160064344A1 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD Public/Granted day:2016-03-03
Information query
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