A 3D NAND memory has vertical NAND strings across multiple memory planes above a substrate, with each memory cell of a NAND string residing in a different memory layer. Word lines in each memory plane each has a series of socket components aligned to embed respective floating gates of a group memory cells. In this way, the word line to floating gate capacitive coupling is enhanced thereby allowing a 4 to 8 times reduction in cell dimension as well as reducing floating-gate perturbations between neighboring cells. In one embodiment, each NAND string has source and drain switches that each employs an elongated polysilicon gate with metal strapping to enhance switching. The memory is fabricated by an open-trench process on a multi-layer slab that creates lateral grottoes for forming the socket components.