Invention Grant
- Patent Title: Three-dimensional nonvolatile memory device
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Application No.: US15050096Application Date: 2016-02-22
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Publication No.: US09496273B2Publication Date: 2016-11-15
- Inventor: Yoo Nam Jeon
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2012-0087280 20120809
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L27/105
Abstract:
A semiconductor device includes word lines stacked in a cell region of a substrate and each of the word lines includes a first conductive layer. At least one selection line is stacked on top of the word lines and includes a second conductive layer. At least one gate line is formed in a peripheral region of the substrate and includes the second conductive layer.
Public/Granted literature
- US20160172374A1 THREE-DIMENSIONAL NONVOLATILE MEMORY DEVICE Public/Granted day:2016-06-16
Information query
IPC分类:
