Invention Grant
US09496310B2 Photodetector, method of manufacturing photodetector, radiation detector, and radiation detection apparatus
有权
光检测器,光电检测器的制造方法,放射线检测器和放射线检测装置
- Patent Title: Photodetector, method of manufacturing photodetector, radiation detector, and radiation detection apparatus
- Patent Title (中): 光检测器,光电检测器的制造方法,放射线检测器和放射线检测装置
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Application No.: US14883117Application Date: 2015-10-14
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Publication No.: US09496310B2Publication Date: 2016-11-15
- Inventor: Hitoshi Yagi , Rei Hasegawa
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabrow, Garrett & Dunner LLP
- Priority: JP2015-037183 20150226
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A photodetector according to an embodiment includes: a semiconductor substrate with a first and second faces; a groove formed on the second face; pixels disposed to the semiconductor substrate, each pixel including: light detection cells disposed on the first face, each light detection cell having a first and second terminals, each light detection cell being surrounded by the groove; a first wiring line disposed on the first face to connect to the first terminal of each of the detection cells; a first opening formed in the second face and penetrating the semiconductor substrate; a first insulating film covering the second face, a side face of the first opening, and a side face and a bottom of the groove; a second opening formed in the first insulating film; a first and second electrodes disposed in the first and second openings respectively; and a light blocking material filled to the groove.
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Information query
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