A semiconductor device according to an embodiment includes a first semiconductor layer of a first conductivity type, second semiconductor regions of a second conductivity type, a third semiconductor region of the second conductivity type, a fourth semiconductor region of the first conductivity type, a gate electrode, an insulating layer, and a first electrode. The first semiconductor layer includes first semiconductor regions. The second semiconductor regions are provided respectively between the first semiconductor regions. The insulating layer is provided between the gate electrode and the third semiconductor region. The first electrode includes a first portion and a second portion. The first portion is connected to the first semiconductor region. The second portion is provided on the fourth semiconductor region side of the first portion. The first electrode is provided on the first semiconductor region and on the second semiconductor region. The first electrode is provided around the fourth semiconductor region.