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US09496339B2 Semiconductor device comprising trench structures 有权
包括沟槽结构的半导体器件

Semiconductor device comprising trench structures
Abstract:
A semiconductor device includes a central portion and an edge termination portion outside the central portion. The central portion includes a transistor cell array in a semiconductor substrate. Components of transistor cells of the transistor cell array are disposed in adjacent trench structures in the semiconductor substrate. The trench structures run in a first linear direction parallel to a main surface of the semiconductor substrate. The trench structures include a plurality of concatenated trench segments in a plane parallel to the main surface in the central portion, at least one of the trench segments connecting a first point and a second point of one trench structure, the first point and the second point being arranged along the first linear direction. The trench segment comprises a portion extending in a direction different from the first direction.
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