Invention Grant
- Patent Title: Semiconductor device comprising trench structures
- Patent Title (中): 包括沟槽结构的半导体器件
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Application No.: US14293479Application Date: 2014-06-02
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Publication No.: US09496339B2Publication Date: 2016-11-15
- Inventor: Minghao Jin , Rudolf Rothmaler , Oliver Blank , Joerg Ortner
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L29/423 ; H01L29/78 ; H01L29/40

Abstract:
A semiconductor device includes a central portion and an edge termination portion outside the central portion. The central portion includes a transistor cell array in a semiconductor substrate. Components of transistor cells of the transistor cell array are disposed in adjacent trench structures in the semiconductor substrate. The trench structures run in a first linear direction parallel to a main surface of the semiconductor substrate. The trench structures include a plurality of concatenated trench segments in a plane parallel to the main surface in the central portion, at least one of the trench segments connecting a first point and a second point of one trench structure, the first point and the second point being arranged along the first linear direction. The trench segment comprises a portion extending in a direction different from the first direction.
Public/Granted literature
- US20150349056A1 SEMICONDUCTOR DEVICE COMPRISING TRENCH STRUCTURES Public/Granted day:2015-12-03
Information query
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