Invention Grant
US09496349B2 P-doping of group-III-nitride buffer layer structure on a heterosubstrate
有权
III型氮化物缓冲层结构在杂基质上的P掺杂
- Patent Title: P-doping of group-III-nitride buffer layer structure on a heterosubstrate
- Patent Title (中): III型氮化物缓冲层结构在杂基质上的P掺杂
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Application No.: US14828148Application Date: 2015-08-17
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Publication No.: US09496349B2Publication Date: 2016-11-15
- Inventor: Stephan Lutgen , Saad Murad , Ashay Chitnis
- Applicant: AZURSPACE Solar Power GmbH
- Applicant Address: DE Heilbronn
- Assignee: AZURSPACE Solar Power GmbH
- Current Assignee: AZURSPACE Solar Power GmbH
- Current Assignee Address: DE Heilbronn
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: EP13155540 20130215
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/072 ; H01L23/52 ; H01L21/338 ; H01L21/8249 ; H01L21/3205 ; H01L29/205 ; H01L29/36 ; H01L29/778 ; H01L29/872 ; H01L33/00 ; H01L29/15 ; H01L21/02 ; H01L29/20 ; H01L29/207
Abstract:
An epitaxial group-ill-nitride buffer-layer structure is provided on a heterosubstrate, wherein the buffer-layer structure has at least one stress-management layer sequence including an interlayer structure arranged between and adjacent to a first and a second group-ill-nitride layer, wherein the interlayer structure comprises a group-ill-nitride interlayer material having a larger band gap than the materials of the first and second group-ill-nitride layers, and wherein a p-type-dopant-concentration profile drops, starting from at least 1×1018 cm-3, by at least a factor of two in transition from the interlayer structure to the first and second group-ill-nitride layers.
Public/Granted literature
- US20150357419A1 P-DOPING OF GROUP-III-NITRIDE BUFFER LAYER STRUCTURE ON A HETEROSUBSTRATE Public/Granted day:2015-12-10
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