Invention Grant
- Patent Title: Compound semiconductor device comprising compound semiconductor layered structure having buffer layer and method of manufacturing the same
- Patent Title (中): 包含具有缓冲层的化合物半导体层状结构的化合物半导体器件及其制造方法
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Application No.: US13328244Application Date: 2011-12-16
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Publication No.: US09496380B2Publication Date: 2016-11-15
- Inventor: Yuichi Minoura , Toshihide Kikkawa , Toshihiro Ohki
- Applicant: Yuichi Minoura , Toshihide Kikkawa , Toshihiro Ohki
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2011-040673 20110225
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/265 ; H01L29/06 ; H01L29/10 ; H01L29/66 ; H01L29/20 ; H01L29/423 ; H01L29/45
Abstract:
At least one kind of impurity selected from, for example, Fe, C, B, Ti, Cr is introduced into at least a buffer layer of a compound semiconductor layered structure from a rear surface of the compound semiconductor layered structure to make a resistance value of the buffer layer high.
Public/Granted literature
- US20120217543A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-08-30
Information query
IPC分类:
