Invention Grant
- Patent Title: Memory cells and methods of forming memory cells
- Patent Title (中): 记忆细胞和形成记忆细胞的方法
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Application No.: US15176609Application Date: 2016-06-08
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Publication No.: US09496495B2Publication Date: 2016-11-15
- Inventor: Martin Schubert , Shu Qin , Scott E. Sills , Durai Vishak Nirmal Ramaswamy , Allen McTeer , Yongjun Jeff Hu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L45/00

Abstract:
Some embodiments include a memory cell having a first electrode, and an intermediate material over and directly against the first electrode. The intermediate material includes stabilizing species corresponding to one or both of carbon and boron. The memory cell also has a switching material over and directly against the intermediate material, an ion reservoir material over the switching material, and a second electrode over the ion reservoir material. Some embodiments include methods of forming memory cells.
Public/Granted literature
- US20160284996A1 Memory Cells and Methods of Forming Memory Cells Public/Granted day:2016-09-29
Information query
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