Invention Grant
- Patent Title: High-frequency circuit substrate
- Patent Title (中): 高频电路基板
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Application No.: US13879690Application Date: 2012-05-21
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Publication No.: US09497852B2Publication Date: 2016-11-15
- Inventor: Makoto Nakabayashi , Kazuaki Ikeda
- Applicant: Makoto Nakabayashi , Kazuaki Ikeda
- Applicant Address: JP Sennan-gun, Osaka
- Assignee: SUMITOMO ELECTRIC FINE FOLYMER, INC.
- Current Assignee: SUMITOMO ELECTRIC FINE FOLYMER, INC.
- Current Assignee Address: JP Sennan-gun, Osaka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2011-114882 20110523
- International Application: PCT/JP2012/062937 WO 20120521
- International Announcement: WO2012/161162 WO 20121129
- Main IPC: B32B3/00
- IPC: B32B3/00 ; H05K1/02 ; H05K3/38 ; H05K1/03

Abstract:
The invention offers a high-frequency circuit substrate that sufficiently decreases the transmission delay and transFmission loss in comparison with the conventional high-frequency circuit substrate. In the offered high-frequency circuit substrate, a dielectric layer made of fluororesin is brought into intimate contact directly with a metal conductor that is used for wiring and that has a surface not subjected to coarsening treatment or primer treatment. The offered high-frequency circuit substrate causes a transmission loss of −3 dB/m or less at a frequency of 1 GHz and has a combined specific inductive capacity of 2.6 or less and a combined dielectric loss tangent of 0.0007 or less.
Public/Granted literature
- US20130199828A1 HIGH-FREQUENCY CIRCUIT SUBSTRATE Public/Granted day:2013-08-08
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