Invention Grant
- Patent Title: Layout optimization of a main pattern and a cut pattern
- Patent Title (中): 主要图案和切割图案的布局优化
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Application No.: US14059328Application Date: 2013-10-21
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Publication No.: US09501601B2Publication Date: 2016-11-22
- Inventor: Shih-Ming Chang , Kuei-Liang Lu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L23/528 ; H01L21/027 ; G03F1/00
Abstract:
A method for feature pattern modification includes extracting both a main pattern and a cut pattern from a design pattern, the main pattern being laid out under a set of process guidelines that improve the process window during formation of the main pattern, and modifying at least one of: the main pattern and the cut pattern if either feature pattern is in violation of a layout rule.
Public/Granted literature
- US20140264760A1 Layout Optimization of a Main Pattern and a Cut Pattern Public/Granted day:2014-09-18
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