A semiconductor memory device according to an embodiment includes: a semiconductor substrate; and a memory cell array which is arranged above the semiconductor substrate in a first direction. The memory cell array includes: a semiconductor layer which extends in the first direction; a first conductive line which extends in a second direction crossing the first direction; a variable resistance film which is arranged at an intersection between the semiconductor layer and the first conductive line; a plurality of second conductive lines which are arranged in the second direction sandwiching the semiconductor layer and extend in the first direction; and a plurality of third conductive lines which are electrically connected to the second conductive lines. Two of the second conductive lines neighboring to each other in the second direction with the semiconductor layer interposed therebetween are electrically connected to different third conductive lines.