Invention Grant
- Patent Title: Photoresist layer and method
- Patent Title (中): 光刻胶层和方法
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Application No.: US14724107Application Date: 2015-05-28
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Publication No.: US09502231B2Publication Date: 2016-11-22
- Inventor: Chen-Yu Liu , Ching-Yu Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: G03F7/11
- IPC: G03F7/11 ; H01L21/02 ; H01L21/311 ; C11D11/00 ; C08F220/18 ; C08F220/22 ; G03F7/40 ; G03F7/42 ; H01L21/027
Abstract:
A system and method for middle layers is provided. In an embodiment the middle layer comprises a floating component in order to form a floating region along a top surface of the middle layer after the middle layer has dispersed. The floating component may be a polymer with a floating group incorporated into the polymer. The floating group may comprise a fluorine atom.
Public/Granted literature
- US20160013041A1 Photoresist Layer and Method Public/Granted day:2016-01-14
Information query
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