Invention Grant
- Patent Title: Substrate processing apparatus, non-transitory computer-readable recording medium and method of manufacturing semiconductor device
- Patent Title (中): 基板处理装置，非暂时性计算机可读记录媒体及半导体装置的制造方法
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Application No.: US14661103Application Date: 2015-03-18
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Publication No.: US09502236B2Publication Date: 2016-11-22
- Inventor: Yukitomo Hirochi , Kazuyuki Toyoda , Kazuhiro Morimitsu , Taketoshi Sato , Tetsuo Yamamoto
- Applicant: Hitachi Kokusai Electric Inc.
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Edell, Shapiro & Finnan, LLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01J37/32 ; H01L21/67 ; C23C16/40 ; C23C16/452 ; C23C16/455
Abstract:
There is provided a method of manufacturing a semiconductor device by processing a substrate by alternately supplying a first processing gas and a second processing gas plasmatized by a plasma unit to a processing container. The method includes: starting a supply of an electric power to plasmatize the second processing gas to the plasma unit without supplying the second processing gas to the plasma unit; and starting a supply of the second processing gas with the electric power being supplied to the plasma unit.
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