Invention Grant
US09502241B2 Group III nitride crystal production method and group III nitride crystal
有权
III族氮化物晶体生产方法和III族氮化物晶体
- Patent Title: Group III nitride crystal production method and group III nitride crystal
- Patent Title (中): III族氮化物晶体生产方法和III族氮化物晶体
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Application No.: US14054036Application Date: 2013-10-15
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Publication No.: US09502241B2Publication Date: 2016-11-22
- Inventor: Hajime Matsumoto , Kunitada Suzaki , Kenji Fujito , Satoru Nagao
- Applicant: MITSUBISHI CHEMICAL CORPORATION
- Applicant Address: JP Chiyoda-ku
- Assignee: MITSUSBISHI CHEMICAL CORPORATION
- Current Assignee: MITSUSBISHI CHEMICAL CORPORATION
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-091586 20110415; JP2011-151709 20110708
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L21/02 ; C30B33/02 ; C30B29/40
Abstract:
Provided is a high-quality Group III nitride crystal of excellent processability. A Group III nitride crystal is produced by forming a film is composed of an oxide, hydroxide and/or oxyhydroxide containing a Group III element by heat-treating a Group III nitride single crystal at 1000° C. or above, and removing the film.
Public/Granted literature
- US20140035103A1 GROUP III NITRIDE CRYSTAL PRODUCTION METHOD AND GROUP III NITRIDE CRYSTAL Public/Granted day:2014-02-06
Information query
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