Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14637400Application Date: 2015-03-04
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Publication No.: US09502252B2Publication Date: 2016-11-22
- Inventor: Li-Wei Feng , Shih-Hung Tsai , Chao-Hung Lin , Hon-Huei Liu , Shih-Fang Hong , Jyh-Shyang Jenq
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201510062339 20150206
- Main IPC: H01L21/225
- IPC: H01L21/225 ; H01L21/8238 ; H01L21/324 ; H01L27/092
Abstract:
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having at least one fin-shaped structure thereon, in which the fin-shaped structure comprises a top portion and a bottom portion; and forming a doped layer and a first liner around the bottom portion of the fin-shaped structure.
Public/Granted literature
- US20160233088A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2016-08-11
Information query
IPC分类:
