Invention Grant
US09502262B2 Nanocrystalline diamond carbon film for 3D NAND hardmask application
有权
用于3D NAND硬掩模应用的纳米晶金刚石碳膜
- Patent Title: Nanocrystalline diamond carbon film for 3D NAND hardmask application
- Patent Title (中): 用于3D NAND硬掩模应用的纳米晶金刚石碳膜
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Application No.: US14833858Application Date: 2015-08-24
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Publication No.: US09502262B2Publication Date: 2016-11-22
- Inventor: Yongmei Chen , Christopher S. Ngai , Jingjing Liu , Jun Xue , Chentsau Ying , Ludovic Godet
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: C23C16/27
- IPC: C23C16/27 ; H01L21/31 ; H01L21/311 ; H01L29/49 ; H01L29/51 ; H01L21/02 ; H01L27/115
Abstract:
A nanocrystalline diamond layer for use in forming a semiconductor device and methods for using the same are disclosed herein. The device can include a substrate with a processing surface and a supporting surface, a device layer formed on the processing surface and a nanocrystalline diamond layer formed on the processing layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm. The method can include positioning a substrate in a process chamber, depositing a device layer on a processing surface, depositing a nanocrystalline diamond layer on the device layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm, patterning and etching the nanocrystalline diamond layer, etching the device layer to form a feature and ashing the nanocrystalline diamond layer from the surface of the device layer.
Public/Granted literature
- US20160064500A1 NANOCRYSTALINE DIAMOND CARBON FILM FOR 3D NAND HARDMASK APPLICATION Public/Granted day:2016-03-03
Information query
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