Invention Grant
- Patent Title: Integrated circuit with a sidewall layer and an ultra-thick metal layer and method of making
- Patent Title (中): 具有侧壁层和超厚金属层的集成电路及其制造方法
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Application No.: US13969324Application Date: 2013-08-16
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Publication No.: US09502346B2Publication Date: 2016-11-22
- Inventor: Chih-Hung Lu , Ching-Chen Hao
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/768 ; H01L23/532
Abstract:
An integrated circuit that includes a substrate, a metal layer over the substrate and a first dielectric layer over the metal layer. The first dielectric layer includes a via. A sidewall layer that includes a silicon compound is in the via. A second dielectric layer is over the sidewall layer and an ultra-thick metal (UTM) layer is in the via.
Public/Granted literature
- US20150048516A1 INTEGRATED CIRCUIT WITH A SIDEWALL LAYER AND AN ULTRA-THICK METAL LAYER AND METHOD OF MAKING Public/Granted day:2015-02-19
Information query
IPC分类:
