Invention Grant
US09502363B2 Wafer level packages and methods for producing wafer level packages having delamination-resistant redistribution layers
有权
晶圆级封装以及用于生产具有防分层再分配层的晶片级封装的方法
- Patent Title: Wafer level packages and methods for producing wafer level packages having delamination-resistant redistribution layers
- Patent Title (中): 晶圆级封装以及用于生产具有防分层再分配层的晶片级封装的方法
-
Application No.: US14223805Application Date: 2014-03-24
-
Publication No.: US09502363B2Publication Date: 2016-11-22
- Inventor: Michael B. Vincent , Trung Q. Duong , Zhiwei Gong , Scott M. Hayes , Alan J. Magnus , Douglas G. Mitchell , Eduard J. Pabst , Jason R. Wright , Weng F. Yap
- Applicant: Michael B. Vincent , Trung Q. Duong , Zhiwei Gong , Scott M. Hayes , Alan J. Magnus , Douglas G. Mitchell , Eduard J. Pabst , Jason R. Wright , Weng F. Yap
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/56 ; H01L23/31

Abstract:
Wafer level packages and methods for producing wafer level packages having delamination-resistant redistribution layers are provided. In one embodiment, the method includes building inner redistribution layers over a semiconductor die. Inner redistribution layers include a body of dielectric material containing metal routing features. A routing-free dielectric block is formed in the body of dielectric material and is uninterrupted by the metal routing features. An outer redistribution layer is produced over the inner redistribution layers and contains a metal plane, which is patterned to include one or more outgassing openings overlying the routing-free dielectric block. The routing-free dielectric block has a minimum width, length, and depth each at least twice the thickness of the outer redistribution layer.
Public/Granted literature
Information query
IPC分类: