Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14282009Application Date: 2014-05-20
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Publication No.: US09502467B2Publication Date: 2016-11-22
- Inventor: Mitsuharu Shoji , Ichiro Fujiwara
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Dentons US LLP
- Priority: JP2013-108448 20130522
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/00 ; H01L27/22 ; H01L43/12
Abstract:
A semiconductor device includes: a first member including a selection transistor on a front surface side of a first substrate; and a second member including a resistance change device and a connection layer that comes in contact with the resistance change device, the connection layer being bonded to a back surface of the first member.
Public/Granted literature
- US20140346624A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-11-27
Information query
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