A method for forming a multi-stack nanowire device includes forming a common release layer on a substrate, the common release layer comprising a common release material. The method also includes forming a first multi-layer stack on a first portion of the common release layer, the first multi-layer stack comprising at least two layers separated by at least one layer comprising the common release material, and forming a second multi-layer stack on a second portion of the common release layer, the second multi-layer stack comprising at least two layers separated by at least one layer comprising the common release material. The method further includes patterning each of the first multi-layer stack and the second multi-layer stack into one or more fins and forming two or more multi-stack nanowires from the one or more fins by removing the common release material using a common etch process.