Trench power metal oxide semiconductor field effect transistor and edge terminal structure including an L-shaped electric plate capable of raising a breakdown voltage

Invention Grant

US09502512B2 Trench power metal oxide semiconductor field effect transistor and edge terminal structure including an L-shaped electric plate capable of raising a breakdown voltage 有权

Title translation: 沟槽功率金属氧化物半导体场效应晶体管和边缘端子结构，其包括能够提高击穿电压的L形电板

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Patent Title: Trench power metal oxide semiconductor field effect transistor and edge terminal structure including an L-shaped electric plate capable of raising a breakdown voltage
Patent Title (中): 沟槽功率金属氧化物半导体场效应晶体管和边缘端子结构，其包括能够提高击穿电压的L形电板
Application No.: US14819450

Application Date: 2015-08-06
Publication No.: US09502512B2

Publication Date: 2016-11-22
Inventor: Chu-Kuang Liu
Applicant: Excelliance MOS Corporation
Applicant Address: TW Hsinchu County
Assignee: Excelliance MOS Corporation
Current Assignee: Excelliance MOS Corporation
Current Assignee Address: TW Hsinchu County
Agency: Jianq Chyun IP Office
Priority: TW101118584A 20120524; TW101209918U 20120524
Main IPC: H01L29/66
IPC: H01L29/66 ; H01L29/40 ; H01L29/78 ; H01L29/739 ; H01L29/423 ; H01L29/417 ; H01L29/06 ; H01L29/872

Trench power metal oxide semiconductor field effect transistor and edge terminal structure including an L-shaped electric plate capable of raising a breakdown voltage

Abstract:

An edge terminal structure of a trench power semiconductor device includes a first conductive-type substrate, a first conductive-type epitaxial layer thereon, a first electrode on a surface of the first conductive-type epitaxial layer, a second electrode on a back of the first conductive-type substrate, a first and a second field plates. The trench power semiconductor device includes an active area and an edge terminal area. A trench is in the surface of the first conductive-type epitaxial layer. The first field plate includes an L-shaped electric-plate, a gate insulation layer below the L-shaped electric-plate, and the first electrode on the L-shaped electric-plate. The second field plate includes a portion of the first electrode and an insulation layer between the portion of the first electrode and the first conductive-type epitaxial layer. The insulation layer covers the tail of the trench and completely covers the L-shaped electric-plate.

Abstract(Chinese):

沟槽功率半导体器件的边缘端子结构包括第一导电型衬底，其上的第一导电型外延层，第一导电型外延层的表面上的第一电极，第一导电型外延层的背面的第二电极第一导电型基板，第一和第二场板。沟槽功率半导体器件包括有源区域和边缘端子区域。沟槽位于第一导电型外延层的表面。第一场板包括L形电板，L形电板下面的栅绝缘层和L形电板上的第一电极。第二场板包括第一电极的一部分和在第一电极的部分和第一导电型外延层之间的绝缘层。绝缘层覆盖沟槽的尾部，完全覆盖L形电板。

Public/Granted literature

US20150340494A1 TRENCH POWER METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND EDGE TERMINAL STRUCTURE Public/Granted day:2015-11-26

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的