Split gate flash memory structure with a damage free select gate and a method of making the split gate flash memory structure

Invention Grant

US09502515B2 Split gate flash memory structure with a damage free select gate and a method of making the split gate flash memory structure 有权

Title translation: 分闸门闪存结构，具有无损选择栅极和分离栅闪存结构的方法

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Patent Title: Split gate flash memory structure with a damage free select gate and a method of making the split gate flash memory structure
Patent Title (中): 分闸门闪存结构，具有无损选择栅极和分离栅闪存结构的方法
Application No.: US14980165

Application Date: 2015-12-28
Publication No.: US09502515B2

Publication Date: 2016-11-22
Inventor: Yuan-Tai Tseng , Ming Chyi Liu , Chang-Ming Wu , Shih-Chang Liu
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Eschweiler & Associates, LLC
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L29/792 ; H01L29/423 ; H01L29/66 ; H01L27/115

Split gate flash memory structure with a damage free select gate and a method of making the split gate flash memory structure

Abstract:

A method of manufacturing a split gate flash memory cell is provided. A select gate is formed on a semiconductor substrate. A sacrificial spacer is formed laterally adjacent to the select gate and on a first side of the select gate. A charge trapping layer is formed lining upper surfaces of the select gate and the sacrificial spacer, and further lining a sidewall surface of the select gate on a second side of the select gate that is opposite the first side of the select gate. A memory gate is formed over the charge trapping layer and on the second side of the select gate. The sacrificial spacer is removed. The resulting semiconductor structure is also provided.

Abstract(Chinese):

提供了一种制造分离栅闪存单元的方法。选择栅极形成在半导体衬底上。牺牲隔离物横向邻近选择栅极并在选择栅极的第一侧上形成。在选择栅极和牺牲隔离物的上表面上形成电荷捕获层，并且进一步在选择栅极的与选择栅极的第一侧相对的第二侧上衬里选择栅极的侧壁表面。存储栅极形成在电荷俘获层上和选择栅极的第二侧上。去除牺牲隔离物。还提供所得的半导体结构。

Public/Granted literature

US20160111510A1 SPLIT GATE FLASH MEMORY STRUCTURE WITH A DAMAGE FREE SELECT GATE AND A METHOD OF MAKING THE SPLIT GATE FLASH MEMORY STRUCTURE Public/Granted day:2016-04-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS