Invention Grant
- Patent Title: Method and system for planar regrowth in GaN electronic devices
- Patent Title (中): GaN电子器件中平面再生长的方法和系统
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Application No.: US14815780Application Date: 2015-07-31
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Publication No.: US09502544B2Publication Date: 2016-11-22
- Inventor: Isik C. Kizilyalli , Linda Romano , David P. Bour
- Applicant: AVOGY, INC.
- Applicant Address: US CA San Jose
- Assignee: Avogy, Inc.
- Current Assignee: Avogy, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/66 ; H01L29/78 ; H01L29/808 ; H01L29/20
Abstract:
A vertical JFET includes a III-nitride substrate and a III-nitride epitaxial layer of a first conductivity type coupled to the III-nitride substrate. The first III-nitride epitaxial layer has a first dopant concentration. The vertical JFET also includes a III-nitride epitaxial structure coupled to the first III-nitride epitaxial layer. The III-nitride epitaxial structure includes a set of channels of the first conductivity type and having a second dopant concentration, a set of sources of the first conductivity type, having a third dopant concentration greater than the first dopant concentration, and each characterized by a contact surface, and a set of regrown gates interspersed between the set of channels. An upper surface of the set of regrown gates is substantially coplanar with the contact surfaces of the set of sources.
Public/Granted literature
- US20150340476A1 METHOD AND SYSTEM FOR PLANAR REGROWTH IN GAN ELECTRONIC DEVICES Public/Granted day:2015-11-26
Information query
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