Invention Grant
- Patent Title: Semiconductor fin structure with extending gate structure
- Patent Title (中): 具有扩展栅结构的半导体鳍结构
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Application No.: US14621805Application Date: 2015-02-13
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Publication No.: US09502567B2Publication Date: 2016-11-22
- Inventor: Che-Cheng Chang , Chih-Han Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/66 ; H01L29/06 ; H01L29/78 ; H01L29/40 ; H01L29/423
Abstract:
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a fin structure formed over the substrate. The semiconductor structure further includes an isolation structure formed around the fin structure and a gate structure formed across the fin structure. In addition, the gate structure includes a first portion formed over the fin structure and a second portion formed over the isolation structure, and the second portion of the gate structure includes an extending portion extending into the isolation structure.
Public/Granted literature
- US20160240650A1 SEMICONDUCTOR STRUCTURE WITH EXTENDING GATE STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2016-08-18
Information query
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