Invention Grant
- Patent Title: Complementary high mobility nanowire neuron device
- Patent Title (中): 互补高迁移率纳米线神经元装置
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Application No.: US14980623Application Date: 2015-12-28
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Publication No.: US09502583B2Publication Date: 2016-11-22
- Inventor: Deyuan Xiao
- Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Agency: Kilpatrick Townsend and Stockton LLP
- Priority: CN201410840374 20141229
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/00 ; H01L29/00 ; B82Y10/00 ; H01L29/788 ; H01L21/8238 ; H01L21/84 ; H01L27/092 ; H01L27/12 ; H01L29/06 ; H01L29/786
Abstract:
A method for forming a semiconductor device includes providing a substrate structure, which includes a nanowire structure supported by two isolation regions on a substrate. The nanowire structure includes a first nanowire and a second nanowire having different high mobility semiconductor materials and conductivity types. A multi-layer film structure is formed surrounding the nanowire structure and includes a conductive material layer sandwiched between two dielectric layers. A plurality of first electrodes are formed surrounding the multi-layer film structure surrounding a channel region of the first nanowire, and a plurality of second electrodes are formed surrounding the multi-layer film structure surrounding a channel region of the second nanowire. A third electrode is formed to contact one end of the nanowire structure, and a fourth electrode is formed to contact the other end of the nanowire structure. A fifth electrode is formed and coupled to a center portion of the nanowire structure.
Public/Granted literature
- US20160190336A1 COMPLEMENTARY HIGH MOBILITY NANOWIRE NEURON DEVICE Public/Granted day:2016-06-30
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