Invention Grant
- Patent Title: Structure of high electron mobility light emitting transistor
- Patent Title (中): 高电子迁移率发光晶体管的结构
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Application No.: US14587818Application Date: 2014-12-31
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Publication No.: US09502602B2Publication Date: 2016-11-22
- Inventor: Chih-Fang Huang , Yi-Chen Li , Ting-Fu Chang , Keh-Yung Cheng , Yu-Li Wang , Chun-Hung Wu , Wei-Chen Yang , Shao-Yen Chiu
- Applicant: NATIONAL TSING HUA UNIVERSITY
- Applicant Address: TW Hsinchu
- Assignee: NATIONAL TSING HUA UNIVERSITY
- Current Assignee: NATIONAL TSING HUA UNIVERSITY
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L27/15 ; H01L33/32
Abstract:
A structure of high electron mobility light emitting transistor comprises a substrate, a HEMT region disposed on the substrate, and a gallium nitride LED (GaN-LED) region disposed on the substrate. A two-dimensional electron gas layer is present in each of the HEMI region and the LED region, and the HEMT region is coupled to the LED region through the two-dimensional electron gas layer.
Public/Granted literature
- US20160190384A1 STRUCTURE OF HIGH ELECTRON MOBILITY LIGHT EMITTING TRANSISTOR Public/Granted day:2016-06-30
Information query
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