Invention Grant
- Patent Title: Light-emitting diode
- Patent Title (中): 发光二极管
-
Application No.: US14641565Application Date: 2015-03-09
-
Publication No.: US09502616B2Publication Date: 2016-11-22
- Inventor: Yu-Yun Chen , Yung-Hsin Lin , Fang-I Li , Shyi-Ming Pan
- Applicant: FORMOSA EPITAXY INCORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Patterson + Sheridan, LLP
- Priority: TW103132866A 20140923
- Main IPC: H01L33/40
- IPC: H01L33/40 ; H01L33/42
Abstract:
The present invention relates to a light-emitting diode (LED), which comprises electrodes having a single metal reflective layer. The single metal reflective layer is thicker than the active layer of the LED. Thereby, at least a portion of light emitted from the active layer is reflected by the single metal reflective layer, and thus enhancing the light-emitting efficiency of the LED.
Public/Granted literature
- US20160087155A1 LIGHT-EMITTING DIODE Public/Granted day:2016-03-24
Information query
IPC分类:
