Invention Grant
- Patent Title: Symmetric dual piezoelectric stack microelectromechanical piezoelectric devices
- Patent Title (中): 对称双压电堆叠微机电压电器件
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Application No.: US14201293Application Date: 2014-03-07
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Publication No.: US09502635B2Publication Date: 2016-11-22
- Inventor: Robert G. Andosca , Kathleen M. Vaeth , Didier Lacroix
- Applicant: MicroGen Systems, Inc.
- Applicant Address: US NY West Henrietta
- Assignee: MicroGen Systems, Inc.
- Current Assignee: MicroGen Systems, Inc.
- Current Assignee Address: US NY West Henrietta
- Agency: LeClairRyan, a Professional Corporation
- Main IPC: H01L41/047
- IPC: H01L41/047 ; H01L41/053 ; H01L41/083 ; H01L41/113 ; H01L41/09 ; H03H3/007 ; H03H9/24 ; H01L41/08

Abstract:
The present invention relates to a device comprising an elongate resonator beam extending between first and second ends. A base is connected to the resonator beam at the first end with the second end extending from the base as a structural layer. The elongate resonator beam comprises either: (1) a first oxide layer on a first piezoelectric stack layer over a structural layer on a second oxide layer over a second piezoelectric stack layer on a third oxide layer or (2) a first oxide layer on a first piezoelectric stack layer over a second oxide layer on a structural layer over a third oxide layer on a second piezoelectric stack over a fourth oxide layer. Also disclosed is a system comprising an apparatus and the device, as well as methods of making and using the device.
Public/Granted literature
- US20150256144A1 SYMMETRIC DUAL PIEZOELECTRIC STACK MICROELECTROMECHANICAL PIEZOELECTRIC DEVICES Public/Granted day:2015-09-10
Information query
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