Invention Grant
- Patent Title: Electrostatic discharge protection circuit and related method
- Patent Title (中): 静电放电保护电路及相关方法
-
Application No.: US14030101Application Date: 2013-09-18
-
Publication No.: US09502892B2Publication Date: 2016-11-22
- Inventor: Chia-Hui Chen , Po-Hsiang Lan , Chien-Yuan Lee , Tsung-Ju Yang , Tzu-Yi Yang , Kuo-Ji Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H02H9/04

Abstract:
A device includes a first power transistor, a second power transistor electrically connected in series with the first power transistor, a first electrostatic discharge (ESD) detection circuit, and a first control circuit electrically connected to the first ESD detection circuit and the first power transistor.
Public/Granted literature
- US20150077886A1 Electrostatic Discharge Protection Circuit and Related Method Public/Granted day:2015-03-19
Information query