Invention Grant
- Patent Title: Exclusive-OR gate using magneto-electric tunnel junctions
- Patent Title (中): 使用磁电隧道结的异或门
-
Application No.: US14871199Application Date: 2015-09-30
-
Publication No.: US09503085B1Publication Date: 2016-11-22
- Inventor: Jonathan Paul Bird , Andrew Marshall
- Applicant: The Research Foundation for the State University of New York , The Board of Regents of The University of Texas System
- Applicant Address: US NY Amherst US TX Austin
- Assignee: The Research Foundation for the State University of New York,Board of Regents, the University of Texas System
- Current Assignee: The Research Foundation for the State University of New York,Board of Regents, the University of Texas System
- Current Assignee Address: US NY Amherst US TX Austin
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H03K19/21
- IPC: H03K19/21 ; H03K19/00 ; H03K19/16 ; H01L43/08 ; G11C11/16
Abstract:
A magneto-electric (ME) magnetic tunnel junction (MTJ) Exclusive-OR (XOR) gate is provided. The ME MTJ XOR gate includes an insulator separating a top ferromagnetic (FM) layer and a bottom FM layer, a top ME layer on the top FM layer, and a bottom ME layer on the bottom FM layer. The ME MTJ XOR gate also includes a top electrode coupled to the top ME layer and a bottom electrode coupled to the bottom ME layer where a voltage between the top electrode and the top FM layer is a first input, a voltage between the bottom electrode and the bottom FM layer is a second input, and a resistance between the top FM layer and the bottom FM layer is indicative of the XOR of the first input and the second input. The ME MTJ XOR has reduced energy consumption, smaller area, faster switching times, and is non-volatile.
Information query
IPC分类:
