Invention Grant
- Patent Title: Method of detecting photolithographic hotspots
- Patent Title (中): 检测光刻热点的方法
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Application No.: US14742717Application Date: 2015-06-18
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Publication No.: US09508138B2Publication Date: 2016-11-29
- Inventor: Yi-Shiang Chang , Chia-Chi Lin , Shin-Shing Yeh , Pei-Shan Shih , Jun-Cheng Lai
- Applicant: Powerchip Technology Corporation
- Applicant Address: TW Hsinchu
- Assignee: Powerchip Technology Corporation
- Current Assignee: Powerchip Technology Corporation
- Current Assignee Address: TW Hsinchu
- Agent Winston Hsu; Scott Margo
- Priority: TW104113937A 20150430
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G06T7/00 ; G06K9/46 ; G06T5/00
Abstract:
A method for detecting photolithographic hotspots is disclosed. After receiving layout data, an aerial image simulation is conducted to extract aerial image intensity indices. Based on the combination of one or more aerial image intensity indices, various aerial image detectors are generated. The value of aerial image detectors is verified to determine the position and type of the photolithographic hotspots.
Public/Granted literature
- US20160321793A1 METHOD OF DETECTING PHOTOLITHOGRAPHIC HOTSPOTS Public/Granted day:2016-11-03
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