Invention Grant
US09508395B2 Three-dimensional one-time-programmable memory comprising off-die read/write-voltage generator
有权
三维一次可编程存储器，包括离线读/写 - 电压发生器
- Patent Title: Three-dimensional one-time-programmable memory comprising off-die read/write-voltage generator
- Patent Title (中): 三维一次可编程存储器，包括离线读/写 - 电压发生器
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Application No.: US15062117Application Date: 2016-03-06
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Publication No.: US09508395B2Publication Date: 2016-11-29
- Inventor: Guobiao Zhang
- Applicant: HangZhou HaiCun Information Technology Co., Ltd.
- Applicant Address: CN HangZhou, Zhejiang US OR Corvallis
- Assignee: HangZhou HaiCun Information Technology Co., Ltd.,Guobiao Zhang
- Current Assignee: HangZhou HaiCun Information Technology Co., Ltd.,Guobiao Zhang
- Current Assignee Address: CN HangZhou, Zhejiang US OR Corvallis
- Priority: CN201610083717 20160208
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C5/06 ; G11C5/14 ; G11C5/04 ; G11C8/14 ; G11C13/00 ; H01L23/00 ; H01L25/065 ; H01L25/10 ; G11C29/04
Abstract:
The present invention discloses a three-dimensional one-time-programmable memory (3D-OTP) comprising an off-die read/write-voltage generator (VR/VW-generator). It comprises at least a 3D-array die and at least a peripheral-circuit die. At least a VR/VW-generator of the 3D-OTP arrays is located on the peripheral-circuit die instead of the 3D-array die. The VR/VW-generator generates at least a read voltage and/or a write voltage different from a supply voltage.
Public/Granted literature
- US20160189754A1 Three-Dimensional One-Time-Programmable Memory Comprising Off-Die Read/Write-Voltage Generator Public/Granted day:2016-06-30
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