A read method of a nonvolatile memory device includes determining whether a selected word line comprises LSB (least significant bit) page only programmed memory cells by applying a first read voltage to the selected word line. In the case that the selected word line comprises LSB (least significant bit) page only programmed memory cells, counting the number of off-cells by applying the first read voltage to the selected word line. And in a read operation, changing a select read voltage being applied to the selected word line according to the number of off-cells.