Invention Grant
- Patent Title: Vertical type semiconductor device, fabrication method thereof and operation method thereof
-
Application No.: US15019185Application Date: 2016-02-09
-
Publication No.: US09508428B2Publication Date: 2016-11-29
- Inventor: Kang Sik Choi
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0024122 20130306
- Main IPC: H01L27/24
- IPC: H01L27/24 ; G11C13/00 ; H01L29/66 ; H01L45/00 ; H01L27/22
Abstract:
A vertical type semiconductor device and a fabrication method thereof are provided. The vertical type semiconductor device includes a pillar structure having a stacking structure of a conductive layer and a data storage material and formed on a common source region, and a gate electrode formed to surround the data storage material of the pillar structure.
Public/Granted literature
- US20160155937A1 VERTICAL TYPE SEMICONDUCTOR DEVICE, FABRICATION METHOD THEREOF AND OPERATION METHOD THEREOF Public/Granted day:2016-06-02
Information query
IPC分类:
