Invention Grant
- Patent Title: Nonvolatile semiconductor memory device of variable resistive type with reduced variations of forming current after breakdown
- Patent Title (中): 可变电阻型非易失性半导体存储器件，击穿后形成电流的变化减小
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Application No.: US13909505Application Date: 2013-06-04
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Publication No.: US09508431B2Publication Date: 2016-11-29
- Inventor: Yukio Tamai , Yusuke Jono
- Applicant: ELPIDA MEMORY, INC.
- Applicant Address: JP Tokyo
- Assignee: ELPIDA MEMORY, INC.
- Current Assignee: ELPIDA MEMORY, INC.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-130349 20120608
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00
Abstract:
A device including a memory cell including a variable resistive memory element; a capacitor; a voltage generation circuit; and a switch circuit including a first switch and a second switch. The first switch is coupled between the voltage generation circuit and the capacitor without an intervention of the second switch. The second switch is coupled between the capacitor and the memory cell without an intervention of the first switch. The first switch is configured to take an on-state during a first period of time and an off-state during a second period of time following the first period of time and the second switch is configured to take an off-state during the first period of time and an on-state during the second period of time.
Public/Granted literature
- US20130329484A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE OF VARIABLE RESISTIVE TYPE Public/Granted day:2013-12-12
Information query
