Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14935569Application Date: 2015-11-09
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Publication No.: US09508544B2Publication Date: 2016-11-29
- Inventor: Kazuhide Tomiyasu
- Applicant: Sharp Kabushiki Kaisha
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Keating & Bennett, LLP
- Priority: JP2012-121018 20120528
- Main IPC: H01L21/477
- IPC: H01L21/477 ; H01L21/02 ; H01L29/786 ; H01L29/45 ; H01L29/66

Abstract:
This semiconductor device (100) includes a substrate (10) and a TFT which is provided on the substrate. The TFT includes a gate electrode (12), an oxide semiconductor layer (14) which faces the gate electrode, source and drain electrodes (16, 18) which are connected to the oxide semiconductor layer, and an insulating layer (22) which contacts at least partially with the source and drain electrodes. The insulating layer (22) includes a lower region (22b) which contacts at least partially with the source and drain electrodes and an upper region (22a) which is located over the lower region. The lower region (22b) has a higher hydrogen content than the upper region (22a).
Public/Granted literature
- US20160064217A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2016-03-03
Information query
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