Invention Grant
- Patent Title: Dummy gate for a high voltage transistor device
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Application No.: US14961736Application Date: 2015-12-07
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Publication No.: US09508605B2Publication Date: 2016-11-29
- Inventor: Yung-Chih Tsai , Han-Chung Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/8238 ; H01L29/40 ; H01L29/49 ; H01L29/66 ; H01L29/78 ; H01L21/326 ; H01L29/45
Abstract:
The present disclosure provides a semiconductor device. The semiconductor device includes a first doped region and a second doped region both formed in a substrate. The first and second doped regions are oppositely doped. The semiconductor device includes a first gate formed over the substrate. The first gate overlies a portion of the first doped region and a portion of the second doped region. The semiconductor device includes a second gate formed over the substrate. The second gate overlies a different portion of the second doped region. The semiconductor device includes a first voltage source that provides a first voltage to the second gate. The semiconductor device includes a second voltage source that provides a second voltage to the second doped region. The first and second voltages are different from each other.
Public/Granted literature
- US20160086859A1 Dummy Gate for a High Voltage Transistor Device Public/Granted day:2016-03-24
Information query
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