Invention Grant
- Patent Title: Semiconductor devices
- Patent Title (中): 半导体器件
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Application No.: US14991020Application Date: 2016-01-08
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Publication No.: US09508649B2Publication Date: 2016-11-29
- Inventor: Hyeon-Kyu Lee , Sunghee Han , Yoosang Hwang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2015-0010037 20150121
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L29/78 ; H01L29/423 ; H01L23/528

Abstract:
Semiconductor devices are provided. The semiconductor devices may include a first interconnection structure and a second interconnection structure which are disposed on a semiconductor substrate. A contact structure may be disposed between the first and second interconnection structures. A first lower air spacer may be disposed between the first interconnection structure and the contact structure. A second lower air spacer may be disposed between the second interconnection structure and the contact structure to be spaced apart from the first lower air spacer. An upper air spacer may be disposed on side surfaces of the contact structure to be connected to the first and second interconnection structures.
Public/Granted literature
- US20160211215A1 SEMICONDUCTOR DEVICES Public/Granted day:2016-07-21
Information query
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