Invention Grant
- Patent Title: Method of manufacturing semiconductor device and structure including passivation film with a trench having sections of different depths and widths
- Patent Title (中): 制造包括具有不同深度和宽度的部分的沟槽的钝化膜的半导体器件和结构的方法
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Application No.: US14732997Application Date: 2015-06-08
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Publication No.: US09508654B2Publication Date: 2016-11-29
- Inventor: Nobutaka Ukigaya , Masao Ishioka
- Applicant: CANON KABUSHIKI KAISHA
- Applicant Address: JP Tokyo
- Assignee: CANON KABUSHIKI KAISHA
- Current Assignee: CANON KABUSHIKI KAISHA
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2014-124683 20140617
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48 ; H01L21/50 ; H01L21/00 ; H01L23/544 ; H01L31/18 ; H01L27/146
Abstract:
A method of manufacturing a semiconductor device is provided. The method includes forming a passivation film on a substrate including a plurality of element regions and a scribe region, forming a trench in the passivation film in a region of the scribe region along an outer edge of each of the element regions, and forming a film on the passivation film in which the trench has been formed by coating. A depth of a first section in a first position of the trench is shallower than a depth of a second section in a second position of the trench. A width of the first section is wider than a width of the second section.
Public/Granted literature
- US20150364514A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND STRUCTURE Public/Granted day:2015-12-17
Information query
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