Invention Grant
- Patent Title: Moisture barrier for semiconductor structures with stress relief
- Patent Title (中): 具有应力消除的半导体结构的湿气屏障
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Application No.: US14334645Application Date: 2014-07-17
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Publication No.: US09508661B2Publication Date: 2016-11-29
- Inventor: Jonathan Abrokwah , Forest Dixon , Thomas Dungan , Greg Halac , Rick Snyder
- Applicant: Avago Technologies General IP (Singapore) Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H01L23/06
- IPC: H01L23/06 ; H01L23/10 ; H01L23/522 ; H01L23/00 ; H01L23/31

Abstract:
A semiconductor structure is disclosed. The semiconductor structure includes an electrically conductive layer disposed over a substrate. A moisture barrier layer is disposed over the substrate and between the substrate and the electrically conductive layer. A dielectric layer is disposed over the moisture barrier layer. The dielectric layer has an elastic modulus that is lower than an elastic modulus of the moisture barrier layer.
Public/Granted literature
- US20160020179A1 MOISTURE BARRIER FOR SEMICONDUCTOR STRUCTURES WITH STRESS RELIEF Public/Granted day:2016-01-21
Information query
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